Publications

Publication Acknowledgement

The following acknowledgment statement should be included in manuscripts for the work conducted at the Dynamic Compression Sector and published in journals, books, conference proceedings, or other printed scientific and technical media.

“This publication is based upon work performed at the Dynamic Compression Sector, which is operated by Washington State University under the U.S. Department of Energy  (DOE)/National Nuclear Security Administration award no. DE-NA0003957.  This research used resources of the Advanced Photon Source, a DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under contract no. DE-AC02-06CH11357.”

Both the APS and the DCS require notification of Accepted manuscripts for experimental work conducted at the Dynamic Compression Sector.

  1. Please send a copyright-free version of each Accepted manuscript to the DCS at dcs.admin@wsu.edu.
  2. Please enter each Accepted manuscript into the APS Publications Database through the APS Publications webpage.

Author Affiliation

When including members of the DCS staff as co-authors on your manuscript, please use the following author affiliation/institutional address:

Dynamic Compression Sector (DCS), Institute for Shock Physics, Washington State University, Argonne, IL 60439, USA

Publication Guidelines

Publications should follow the guidelines for professional conduct as established by the American Physical Society.

Representative Results

X-Ray Imaging

Scientific Reports, 6, 28094 (2016)

Axial and lateral displacements of the lattice

Finite element simulation indicating the material velocity

Dynamic behavior of engineered lattice materials

X-Ray Scattering

Journal of Applied Physics, 117, 245902 (2015)

Measurement of carbon condensates using SAXS during detonation of the high explosive HNS

X-Ray Diffraction

Physical Review Letters, 117, 045502 (2016)

Real-time examination of atomistic mechanisms during shock-induced structural transformation in Si